富樫 理恵

Herein, triangular‐lattice nanopillar templates are fabricated on sputter‐deposited AlN/Si (111) substrates. Nanotemplate selective‐area growth via radiofrequency‐plasma‐assisted molecular beam epitaxy is employed to grow GaN nanocolumns on the nanopillars. Well‐ordered uniform GaN nanocolumn arrays are obtained by inserting a migration‐enhanced‐epitaxy grown AlN/AlGaN buffer layer, thereby aligning the polarity of GaN to Ga‐polar. Subsequently, bulk InGaN active layers are grown on top of the GaN nanocolumns with increasing growth time (t_g = 10–20 min). In the initial stage of growth (t_g = 10 min), low‐In‐content InGaN grows on the edges of the six‐sided pyramidal top of the GaN nanocolumns. As the growth progresses, low‐In‐composition InGaN fills the sides between InGaN on the edges, while high‐In‐composition InGaN rapidly grows on the top of the c‐plane nanocolumns. High‐angle annular dark‐field scanning transmission electron microscopy reveals the formation of an InGaN core, covered with a low‐In‐composition InGaN shell, on the top of the nanocolumns. At t_g = 20 min, the photoluminescence spectrum exhibits a peak at 669 nm with a full width at half maximum value of 51.7 nm. Thus, the proposed method is suitable for growing red‐light‐emitting well‐ordered InGaN/GaN nanocolumn arrays on Si.

Abstract In this paper, we report achieving extremely high-density packing in high-voltage vertical gallium nitride (GaN) nanocolumn Schottky barrier diodes (NC-SBDs) through the adoption of a bottom-up process. The NC-SBDs were formed via epitaxial growth using Titanium-mask selective area growth (Ti-SAG) by rf-plasma-assisted MBE (rf-MBE), realizing a packing density equivalent to exceeding 10 million columns/mm². Our fabricated NC-SBDs with a period of 300 nm, a diameter of 250 nm, and a drift length of 1.3 μm demonstrated a breakdown voltage (BV) of 260 V with an on-resistance of 2.0 mΩcm², yielding an excellent figure of merit of 33.8 MW/cm² for nanocolumn-based high-voltage devices. We also discuss dielectric reduced surface field effect and impurities within the nanocolumns as potential factors contributing to the achievement of higher BV devices.

Abstract A red InGaN-based nanocolumn micro μLED with an emission diameter of ϕ2.2 μm was demonstrated to achieve an on-wafer external quantum efficiency (EQE) of 2.1% at the peak wavelength of 615 nm. The LED was fabricated by repeating the electrode process on the same nanocolumn pattern area and reducing the emission diameter from ϕ80 to ϕ2.2 μm. The peak EQE, which was maximized at ∼25 A cm⁻², increased by decreasing the emission diameter from 1.2% to 2.1%. This behavior, which differs from that of InGaN-film LEDs, is characterized as a unit of independent nano-LEDs with passivated sidewalls of nanocolumn LEDs.