Faculty of Science and Technology, Department of Engineering and Applied Sciences
Job title
Associate Professor
Degree
博士(工学)(東京農工大学)
Research funding number
50444112
J-Global ID
201801000291501271
Research Interests
Hydride vapor phase epitaxy
,First principles calculation
,Growth of oxide semiconductor
,Growth of group III nitride semiconductor
,Thermodynamic analysis
,Growth of semiconductor materials
Research Areas
Nanotechnology/Materials / Structural and functional materials /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /
Applied Physics Express 17(1) 014004-014004 Dec 2023
Abstract
A red InGaN-based nanocolumn micro μLED with an emission diameter of ϕ2.2 μm was demonstrated to achieve an on-wafer external quantum efficiency (EQE) of 2.1% at the peak wavelength of 615 nm. The LED was fabricated by repeating the ele...
Nanotechnology 34(43) 435201-435201 Aug 2023 [Refereed]
Abstract
In this study, the growth behavior of Indium gallium nitride (InGaN)-based nanocolumn arrays was investigated, and red emission nanocolumn micro-light emitting diodes (μ-LEDs) were fabricated. The internal structure of the InGaN/GaN sup...
JAPANESE JOURNAL OF APPLIED PHYSICS 62(5) May 2023 [Refereed]
Thermodynamic analyses for the growth of group-III sesquioxides, including alpha-Al2O3, ss-Ga2O3, and c-In2O3, by both ozone and plasma-assisted MBE were performed. In either case, under O-rich conditions, the driving force for III2O3 (III = Al, G...
Japanese Journal of Applied Physics Oct 2022 [Refereed]
Abstract
Thermodynamic analyses of β-Ga2O3 growth by both ozone and plasma-assisted molecular beam epitaxy were performed. In either case, the growth mechanism was found to differ depending on whether the input VI/III ratio...