Faculty of Science and Technology, Department of Engineering and Applied Sciences
Job title
Professor
Degree
工学士(上智大学), 工学修士(上智大学), 博士（工学）(上智大学)
Research funding number
00266074
J-Global ID
200901053354827454
Profile
1988-1994 Study on AlGaInP red-jight semiconductor laser diodes. 1995-current Development and device application of II-VI compound semiconductors on InP substrates.(Subject of research) Development of novel functional optical devices using compound semiconductors(Proposed theme of joint or funded research) Development of full color emission devices
Journal of Electronic Materials 47(8) 1-4 May 2018 [Refereed]
Conduction band discontinuity (ΔEc) of MgSe/ZnCdSe heterojunctions were evaluated using n–i–n diodes consisting of an undoped i-MgSe layer sandwiched by n-doped ZnCdSe layers. The n–i–n diodes were fabricated on InP substrates by molecular beam ep...
Koji Fukushima Tomohiro Shiraishi Ryohei Kobayashi Katsumi Kishino Ichirou Nomura
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 13(7-9) 665-668 2016 [Refereed]
The application of indium tin oxide (ITO) as the p-cladding layer of II-VI compound semiconductor laser diodes (LDs) on InP substrates was investigated. The waveguide analysis of the LD structures revealed that the optical confinement effect aroun...
Ryohei Kobayashi Shingo Takamatsu Koji Fukushima Katsumi Kishino Ichirou Nomura
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 13(7-9) 669-672 2016 [Refereed]
II-VI-compound-semiconductor laser diode (LD) structures on InP substrates were investigated using device simulations and waveguide analysis. Our simulations showed that electron injection from the n-cladding into the active layer is hindered by t...
JOURNAL OF CRYSTAL GROWTH 425 199-202 Sep 2015 [Refereed]
N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (R-c) between the contact layers and several electrod...
Technical report of IEICE. LQE 114(338) 117-120 Nov 2014
Nitride has an attractive feature of bandgap engineering from ultraviolet to infrared. However, a lot of defects in nitride inhibit the feature. In this study, we demonstrated nitride nanocolumn on Si wafer that is expected realization of large-sc...
MgZnCdSe, BeZnTe, and BeZnSeTe II-VI compound semiconductors grown on InP substrates are very attractive for middle visible range, especially green light emitting devices. We have developed these materials and emitting devices composed of BeZnSeTe...
Technical report of IEICE. LQE 103(527) 45-48 Dec 2003
Novel II-VI compound materials such as MgZnCdSe, BeZnTe, and their related superlattices (SLs) grown on InP substrates were proposed for wide-range visible optical devices such as laser diodes (LDs) and light emitting diodes (LEDs).Visible LEDs co...
Innovation of energy and environment-friendly devices by nanocrystal effectJapan Society for the Promotion of Science: Grants-in-Aid for Scientific Research Grant-in-Aid for Specially Promoted ResearchKISHINO Katsumi OHTSUKI Tomi SEKIGUCHI Hiroto KOUNO Tetsuya EMA Kazuhiro KIKUCHI Akihiko NAKAOKA Toshihiro NOMURA Ichirou SEKINE Tomoyuki OTO Kenichi
Sophia University