The 1st International Workshop on Gallium Oxide and Related Materials 2015, Young Researcher Award,Comparative Study on Thermal Stability of Group-III Oxides
Rie Togashi Yumi Kisanuki Ken Goto Hisashi Murakami Akito Kuramata Shigenobu Yamakoshi Bo Monemar Akinori Koukitu Yoshinao Kumagai
Japanese Journal of Applied Physics 55(12) 1202BE-1-1202BE-6 2016年11月 [査読有り]
The thermal and chemical stabilities of group-III sesquioxides (Al2O3, Ga2O3, and In2O3) were comparatively investigated at an atmospheric pressure at heat treatment temperatures ranging from 250 to 1450 °C in a flow of either N2 or H2. In a flow ...
Togashi Rie Numata Shiyu Hayashida Mayuko Suga Takayuki Goto Ken Kuramata Akito Yamakoshi Shigenobu Paskov Plamen Monemar Bo Kumagai Yoshinao
Jpn. J. Appl. Phys. 55(12) 1202B3 2016年10月
In this work, the first-ever growth of cubic-In<inf>2</inf>O<inf>3</inf>at 1000 °C by halide vapor phase epitaxy (HVPE) was achieved, using gaseous InCl and O<inf>2</inf>as precursors in a N<inf>2</inf>flow. The growth rates of In<inf>2</inf>O<inf...
Rie Togashi Shiyu Numata Mayuko Hayashida Takayuki Suga Ken Goto Akito Kuramata Shigenobu Yamakoshi Plamen Paskov Bo Monemar Yoshinao Kumagai
Japanese Journal of Applied Physics 55(12) 1202B3-1-1202B3-5 2016年10月 [査読有り]
In this work, the first-ever growth of cubic-In2O3 at 1000 °C by halide vapor phase epitaxy (HVPE) was achieved, using gaseous InCl and O2 as precursors in a N2 flow. The growth rates of In2O3 layers on (001) β-Ga2O3 and (0001) sapphire substrates...
Hisashi Murakami Nao Takekawa Anna Shiono Quang Tu Thieu Rie Togashi Yoshinao Kumagai Koh Matsumoto Akinori Koukitu
Journal of Crystal Growth 456(15) 140-144 2016年8月 [査読有り]
Tri-halide vapor phase epitaxy (THVPE) of thick GaN using GaCl3 was investigated for fabricating low-cost, high-crystalline-quality GaN substrates instead of the conventional manufacturing method of GaCl-based hydride vapor phase epitaxy (HVPE). T...
上智大学
理工学部