2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) TuD1-2, 2016年 [査読有り]
We have successfully obtained 2-inch mirror like surface InP/Si wafer by using direct bonding. GaInAsP-InP double-hetero structure laser was grown on InP/Si substrate by MOVPE. Low temperature lasing was attained and show their characteristics.
2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) WA2-76 2016年 [査読有り]
Stranski-Krastonogh QDs have been successfully grown on InP/Si substrate fabricated by wafer direct bonding. According to PL and AFM measurements, almost the same size and peak wavelength have been obtained with the InP substrate.
2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) WA2-75, 2016年 [査読有り]
We have successfully demonstrated the growth of InP/GaInAs core-multishell nanowires employed the self-catalytic VLS mode and VPE mode of MOVPE, and obtained the photoluminescence spectrum dependent on the thickness of GaInAs shell layer.
2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) ThB5 2016年 [査読有り]
We have successfully obtained lasing characteristics of GaInAsP double-hetero laser diode grown on directly bonded InP/Si substrate through the InP-Si interface carrier injection. Directly bonded InP/Si substrate was prepared by 1 mu m thickness I...