Takahisa Shiraishi   Mutsuo Ishikawa   Hiroshi Uchida   Takanori Kiguchi   Minoru K. Kurosawa   Hiroshi Funakubo   Toyohiko J. Konno   
JAPANESE JOURNAL OF APPLIED PHYSICS 56(10) 10PF04-1-10PF04-5 2017年10月 [査読有り]
(111)-oriented epitaxial (K0.5Na0.5)NbO3 films of 2 mu m thickness were deposited at 240 degrees C on (111)(c)SrRuO3//(111)SrTiO3 substrates by a hydrothermal method. Scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy (...
JAPANESE JOURNAL OF APPLIED PHYSICS 56(10) 10PF10-1-10PF10-5 2017年10月 [査読有り]
For the application of electronic devices using ferroelectric/piezoelectric components, one-axis-oriented tetragonal Pb(Zr0.40Ti0.60)O-3 (PZT) films with thicknesses of up to 1 mu m were fabricated with the aid of a Ca2Nb3O10 nanosheet (ns-CN) tem...
JAPANESE JOURNAL OF APPLIED PHYSICS 56(10) 10PF09-1-10PF09-4 2017年10月 [査読有り]
A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O-3 (PZT) was successfully obtained on a (100) Si substrate using a {101} PdO//{111} Pd thin film as a buffer layer. The {101} PdO//{111} Pd thin film buffer layer was...
Science of Advanced Materials 9(10) 1806-1809 2017年10月 [査読有り]
We have been proposed a new orientation controlling method using a (101)PdO//(111)Pd buffer layer to deposit (110)-one-axis-oriented perovskite oxide thin films on various kinds of substrates. The (101)-oriented PdO can be obtained by oxidizing (1...
JAPANESE JOURNAL OF APPLIED PHYSICS 56(5) 05DC02-1-05DC02-4 2017年5月 [査読有り]
Mg2Si thin films were deposited at 320 degrees C on (001) Al2O3 and (100) CaF2 substrates by radio-frequency magnetron sputtering. Both films showed a preferential (111) out-of-plane orientation with an in-plane random orientation irrespective of ...