Journal of Electronic Materials 47(8) 1-4 2018年5月 [査読有り]
Conduction band discontinuity (ΔEc) of MgSe/ZnCdSe heterojunctions were evaluated using n–i–n diodes consisting of an undoped i-MgSe layer sandwiched by n-doped ZnCdSe layers. The n–i–n diodes were fabricated on InP substrates by molecular beam ep...
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 13(7-9) 665-668 2016年 [査読有り]
The application of indium tin oxide (ITO) as the p-cladding layer of II-VI compound semiconductor laser diodes (LDs) on InP substrates was investigated. The waveguide analysis of the LD structures revealed that the optical confinement effect aroun...
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9 13(7-9) 669-672 2016年 [査読有り]
II-VI-compound-semiconductor laser diode (LD) structures on InP substrates were investigated using device simulations and waveguide analysis. Our simulations showed that electron injection from the n-cladding into the active layer is hindered by t...
JOURNAL OF CRYSTAL GROWTH 425 199-202 2015年9月 [査読有り]
N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (R-c) between the contact layers and several electrod...