PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8 11(7-8) 1213-1217 2014年 [査読有り]
The photoluminescence (PL) characteristics of ZnCdSe/BeZnTe type-II superlattices (SLs) with various thickness combinations of ZnCdSe and BeZnTe layers were investigated at room temperature. High PL peak intensities that were comparable to those o...
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8 11(7-8) 1273-1277 2014年 [査読有り]
ZnTe and ZnSeTe p-contact layers were investigated for use in BeZnSeTe/MgZnCdSe optical devices on InP sub-strates. The contact resistances (Rc) of Au electrodes to N-doped p-ZnTe and p-ZnSeTe contact lay-ers were evaluated using the circular tran...
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8 11(7-8) 1278-1281 2014年 [査読有り]
Indium tin oxide (ITO) transparent electrodes formed on II-VI compound semiconductor optical devices on InP substrates were characterized. Two kinds of ZnCdSe/BeZnTe p-n diode devices with a different p-contact layer (i.e., p-ZnTe and p-ZnSeTe lay...
JOURNAL OF CRYSTAL GROWTH 378 263-265 2013年9月 [査読有り]
We proposed BeZnTe/ZnSeTe superlattice quasi-quaternaries (SLQQs) as an active layer material replaced with BeZnSeTe quaternaries for yellow/green light emitting devices. BeZnTe/ZnSeTe SLQQs with various layer thickness combinations of BeZnTe and ...
JAPANESE JOURNAL OF APPLIED PHYSICS 50(3) 031201-1-031201-8 2011年3月 [査読有り]
The photopumped lasing characteristics of double heterostructures with a BeZnSeTe active layer grown on InP substrates were systematically investigated. Green-to-yellow lasing emissions from 538 to 570nm were observed at room temperature (RT). The...