Y Takashima   Nomura, I   Y Nakai   A Kikuchi   K Kishino   
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 241(3) 747-750 2004年3月
A novel BeZnSeTe quaternary has been proposed for active layers of II-VI visible light emitting devices on InP substrates. BeZnSeTe, which lattice parameters were matched to InP, were grown on InP substrates by molecular beam epitaxy (MBE). The Be...
SB Che   Nomura, I   A Kikuchi   K Kishino   
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 241(3) 739-746 2004年3月
We have fabricated yellow-green light emitting diodes (LEDs) and laser diodes (LDs) by using II-VI compounds grown on an InP substrate. A separate confinement hetero-structure was fabricated by means of Cl-doped MgSe/ZnCdSe SuperLattices(SLs) for ...
Physica Status Solidi C: Conferences 1(10) 2708-2711 2004年 [査読有り]
Aging characteristics of BeZnSeTe II-VI yellow light emitting diodes (LEDs) fabricated on InP substrates by molecuar beam epitaxy were investigated under higher current injections from 130 to 900 A/cm2 at room temperature. Light output decays duri...
Physica Status Solidi C: Conferences 1(6) 1477-1486 2004年
II-VI compound materials containing beryllium-chalcogenides such as BeZnTe, ZnCdSe/BeZnTe, and MgSe/BeZnTe superlattices grown on InP substrates have been investigated for yellow-green emitters employing molecular beam epitaxy. Photoluminescence p...
SB Che   Nomura, I   A Kikuchi   K Kishino   
APPLIED PHYSICS LETTERS 81(6) 972-974 2002年8月
Yellow-green (560 nm) II-VI laser diodes on InP substrates were successfully operated under the pulsed current injection at 77 K. A separate confinement heterostructure was formed by employing MgSe/BeZnTe:N superlattices (SL) as p-cladding layers ...