K Fukada   Nomura, I   SB Che   E Ogiwara   A Kikuchi   K Kishino   
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 229(1) 107-110 2002年1月
The extended defect density of ZnCdSe on InP substrates was successfully reduced by introducing BeZnTe buffer layers. A very low etch pit density (EPD) around 7 x 10(3) cm(-3) was obtained for ZnCdSe layers grown on BeZnTe buffer layers. In the ph...
K Kishino   Nomura, I   Y Ochiai   SB Che   
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 229(2) 991-994 2002年1月
ZnCdTe/ZnTe pn-junction LEDs, which consisted of a 10 nm ZnCdTe active layer, and p- and n-type ZnTe cladding layers doped with N and Cl, respectively, were grown on ZnTe substrates by molecular beam epitaxy. The current injection into the ZnCdTe ...
SB Che   Nomura, I   T Takada   A Kikuchi   K Shimomura   K Kishino   
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40(12) 6747-6752 2001年12月
ZnCdSe/BeZnTe II-VI compound superlattices (SLs) were grown on InP substrates by molecular beam epitaxy for the first time. In the X-ray diffraction studies, definite satellite Peaks were observed for each sample, which indicates that fine periodi...
SB Che   Nomura, I   T Takada   A Kikuchi   K Shimomura   K Kishino   
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 39(1) S18-S22 2001年12月
Novel ZnCdSe/BeZnTe type-II superlattices (SLs) are very attractive For active layers of new visible light emitting devices using II-VI compounds on InP substrates. It is expected that the transition energy of the SL can be controlled in a wide vi...
M Takizawa   Nomura, I   SB Che   A Kikuchi   K Shimomura   K Kishino   
JOURNAL OF CRYSTAL GROWTH 227 660-664 2001年7月
BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice (SL) and BeZnCdSe quantum well (QW) structures were grown on InP substrates by molecular beam epitaxy for the first time. As for a lattice-matched Be-0.08(Zn0.30Cd0.70)(0.92)Se sample, a single-pea...