研究者業績

林 等

ハヤシ ヒトシ  (Hitoshi Hayashi)

基本情報

所属
上智大学 理工学部情報理工学科 教授
学位
博士(工学)(東京大学)
電気工学修士(東京大学)

研究者番号
70634963
J-GLOBAL ID
201201051908687873
researchmap会員ID
7000002862

2012年-現在 上智大学理工学部
○建築情報学、i-Construction
○CASE(コネクティッド、自動化、シェアリング、電動化)
○人工知能(AI)ネットワーク
○機械学習を用いた無線センサネットワーク
○第5世代移動通信システム(5G)
○スマートメータリングシステム
○ホワイトスペースの有効活用に向けた低歪送受信機
○高速起動・低消費電力符号化方式

2000年-2001年 マサチューセッツ工科大学(MIT)
○Wireless Systems Research

1992年-2012年 日本電信電話株式会社(NTT)
○企業内R&D(Research and Development)のインキュベーション/プロデュース
○300MHz帯物品管理/433MHz帯国際物流用RFID
○ソフトウェア無線用マルチバンド受信機
○1.9GHz帯PHS/11GHz帯固定ディジタルマイクロ波方式用高効率電力増幅器
○モノリシックマイクロ波送受信回路の小型化・高性能化

1990年-1992年 東京大学工学部
○強誘電性液晶スイッチング光交換方式
○外乱推定に基づく大規模電力システムの分散制御

(共同研究者: 和保 孝夫 先生、高野 忠 先生、水澤 純一 先生)

研究活動では、主に次の二つのことを研究の柱にしている。
(Sophia EECS)
1.IoTを加速する機械学習を用いた「Beyond 5G」無線センサネットワークの低消費電力・高信頼伝送
2.人工知能(AI)チップを用いたIoTエッジデバイスの小型化・低消費電力化

教育活動では、学部生を対象に、「情報フルエンシー(電気回路・電子回路)」、「情報フルエンシー(予測分析)」、「データサイエンスとデータエンジニアリングの基礎」、「電子回路」、「計測と制御」、「通信ネットワークシステム」、「基礎情報学【物質生命理工学科クラス】」、「COMMUNICATION AND NETWORK ENGINEERING」、「情報理工学実験I」、「情報理工学実験II」の講義と実験を担当している。
また、大学院生を対象に、「センサネットワーク特論」、「集積回路工学」の講義を担当している。

公開講座においては、「データドリブンのビジネス判断に向けた解析手法」、「ビジネス・知財入門」を担当している。


学歴

 3

論文

 112
  • H Hayashi, M Muraguchi
    1998 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 1 89-92 1998年  査読有り
    IF-band MMICs for high-speed wireless signal processing are presented. The first is a miniaturized 90 degrees divider/combiner with 2.1-dB mean transmission loss for dividing signals at 140 MHz. The second is a logarithmic/limiting amplifier which utilizes a self-phase-distortion compensation technique. More than 65-dB gain and less than 5 degrees phase deviation were obtained.
  • H Hayashi, M Muraguchi
    IEICE TRANSACTIONS ON ELECTRONICS E80C(6) 768-774 1997年6月  査読有り
    This paper proposes a low distortion technique which reduces transmitter intermodulation. It is shown that one of the third order transmitter intermodulation products generated can be reduced by using a parallel amplifier configuration which includes a 45 degrees divider and a 45 degrees combiner. It is already known that the other third order transmitter intermodulation product can be reduced by using a parallel amplifier configuration using 90 degrees hybrids. Thus, all of the third order transmitter intermodulation can he reduced by combining these configurations. This paper also shows the experimental results obtained with a parallel amplifier using 90 degrees hybrids and one using a 45 degrees divider and combiner in the K-band, The spectra of these amplifiers are compared, and it is found that third order transmitter intermodulation can be reduced by more than 29 dB in the parallel amplifier using the 45 degrees divider and combiner.
  • H Hayashi, M Muraguchi, Y Umeda, T Enoki
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 44(12) 2369-2374 1996年12月  査読有り
    This paper demonstrates a high-Q broad-band active inductor and its application to a low-loss analog phase shifter, The proposed high-Q broad-band active inductor utilizes frequency-insensitive negative resistance to compensate constant internal losses caused by the drain-to-source conductance of the field-effect transistors (FET's), the de bias circuit, and several other factors. The measured frequency range of the fabricated InAlAs/InGaAs/InP HEMT active inductor is 6 to 20 GHz for Q values greater than 100, and 7 to 15 GHz for Q values greater than 1000, A low-loss analog phase shifter is also fabricated at C-band, This is constructed with the active inductors, the varactor diodes and the low-loss multilayer broad-side coupler in a MIC structure, Since the constant negative resistance of the active inductors also compensates the line loss of the coupler and the varactor diodes' series resistance, the measured results show a good insertion loss performance with a large phase shift, A phase shift of more than 225 degrees within a 0.8 dB insertion loss from 4.7 to 6.7 GHz, another of more than 180 degrees within 1.3 dB insertion loss from 3.7 to 8.5 GHz, and one more of more than 90 degrees within 1.4 dB insertion loss from 3.5 to 10.6 GHz were obtained.
  • 村口正弘, 山口陽, 林等, 東原恒夫, 山岸明洋
    NTT R&D 45(8) 105-112 1996年8月  
  • H Hayashi, M Muraguchi, Y Umeda, T Enoki
    MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS 103-106 1996年  査読有り
  • Hitoshi Hayashi, Masashi Nakatsugawa, Tadao Nakagawa, Masahiro Muraguchi
    Combined Optical-Microwave Earth and Atmosphere Sensing - Conference Proceedings 277-280 1996年  査読有り
    A novel optical inductance control technique using tunable inductance circuits is presented. The technique employs direct illumination as a means of optically controlling inductance. This is a promising technique for controlling oscillators, filters, active antennas, etc.
  • H HAYASHI, M NAKATSUGAWA, R MURAGUCHI
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 43(11) 2557-2564 1995年11月  査読有り
    This paper demonstrates a self phase distortion compensation technique to realize linear power amplifiers, in which the positive phase deviation from a common-source PET and the negative phase deviation from a common-gate FET cancel each other, It is confirmed both theoretically and experimentally that increasing the drain-to source conductance, G(d), causes the self phase distortion compensation effect, An experimental power amplifier for L-band personal communications systems, which employs the cascode connection, shows good phase deviation performance, More than 20-dB gain, 21-dBm output power, and 50% power added efficiency are obtained along with the adjacent channel interference of -52 dBc in 192-kHz bands at 600-kHz offset frquency from 1.9 GHz at the operating voltage of only 3 V. The demonstrated performances satisfy the specifications for the 1.9-GHz Japanese Personal Handy-phone System (PHS) utilizing the pi/4-shift QPSK modulation scheme, The proposed technique is suitable for MMIC design, and allows the design of handsets that are small, lightweight, and have long operating times.
  • Muraguchi, M., Nakatsugawa, M., Hayashi, H., Aikawa, M.
    IEEE 1995 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.95CH3577-7) 145-148 1995年  査読有り
    An ultra low power consumption amplifier chip set for the 1.9 GHz Japanese Personal Handy-phone System (PHS) is presented. The chip set includes a linear power amplifier, a driver amplifier, and an LO switch amplifier. These amplifiers use Cascode FETs that provide low phase distortion, high gain, and low current operation. The power amplifier uses a new concept of a self-phase distortion compensation to achieve a record performance of 45% power added efficiency with sufficient linearity. The driver amplifier has a gain of 13.5 dB with a low power consumption of 3mW (1mA, 3V). The LO switch amplifier is a new MMIC that has both switch and buffer amplifier functions. The switch amplifier has an output power of 3 dBm, a forward gain of 15 dB, and a reverse isolation of 35 dB with a low power consumption of 6mW (2mA, 3V).
  • M MURAGUCHI, M NAKATSUGAWA, H HAYASHI, M AIKAWA
    1995 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 9-12 1995年  査読有り
  • M MURAGUCHI, M NAKATSUGAWA, H HAYASHI, M AIKAWA
    1995 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 1 9-12 1995年  査読有り
  • Hitoshi Hayashi, Masashi Nakatsugawa, Masahiro Muraguchi
    1995 25th European Microwave Conference 1 24-26 1995年  査読有り
    © 1995 IEEE. A novel MMIC power amplifier that uses a cascode FET with unequal gate widths is presented. The amplifier uses a new concept of self phase distortion compensation. By enlarging the gate widths of a common-source FET, output phase deviation can be improved without reducing the gain and output power. A prototype PA achieves the high power added efficiency of 50 % at the drain supply voltage of 3.5 V with sufficient linearity for the 1.9-GHz Japanese Personal Handy-phone System.
  • HAYASHI HITOSHI, M. Nakatsugawa, M. Muraguchi
    1994 Asia Pacific Microwave Conference Dig. 555-558 1994年12月  査読有り

MISC

 34

講演・口頭発表等

 88

社会貢献活動

 1