菊池 昭彦

Abstract The fabrication technology for photonic crystals (PhCs) pertaining to the near-infrared region is mature, and the development of highly functional PhCs using low-symmetry nanoholes is rapidly progressing. In the visible region, InGaN/GaN systems that have good luminescent and electrical properties are the most promising candidate materials for such types of highly functional PhCs, but the development is not progressing. In this study, we report on the basic design parameters and a new fabrication method for InGaN/GaN-based PhC membranes by combining hydrogen environment anisotropic thermal etching based on hydrogen-assisted thermal decomposition and nitric acid wet etching of the AlInN sacrificial layer. Using this method, we fabricated high-quality InGaN/GaN multiple-quantum-well PhC membrane structures having six-membered rings of well-formed fine equilateral triangular nanoholes with a side length of 100 nm. Enhanced green room-temperature photoluminescence with an intensity nine times higher than that of as-grown wafers was observed for the PhC membrane.

In Results and discussion, ‘…, frequency doubled 532 nm YAG laser…’ should read ‘…, frequency doubled 532 nm laser…’. The authors had misrecognized one of the product specifications of the laser used for the experiments. However, it has no effects on the experimental results, discussions, and conclusions. The authors apologize for any inconvenience caused. The original article has been corrected.