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  2. Shimomura Kazuhiko

Shimomura Kazuhiko

  (下村 和彦)

Profile Information

Affiliation
Professor, Faculty of Science and Technology, Department of Engineering and Applied Sciences, Sophia University
(Concurrent)Chairperson of the Master's(Doctoral) Program in Science and Technology
Degree
工学博士(東京工業大学)
Researcher number
90222041
J-GLOBAL ID
200901062540285806
researchmap Member ID
1000073283
External link

(Subject of research)
Optical Switch
Metal Organic Vapor Phase Epitaxy
Wavelength Divide Optical Switch
All Optical Switch
Quantum Dot
Optical Interconnerction
Electron Device

Research Interests

 13

Research Areas

 2

Research History

 1

Papers

 241
  • Liang Zhao, Ryosuke Yada, Mizuo Kuroi, Junyu Zhang, Kazuhiko Shimomura
    physica status solidi (a), 222(18) 2500430, Aug 13, 2025  Peer-reviewedLast author
    The lasing characteristics of GaInAsP separate confinement heterostructure (SCH)–multiple quantum well (MQW) laser diodes grown on hydrophilic‐bonded InP–Si substrates are investigated. A hydrophilic bonding method is used to directly bond an InP thin film to a Si substrate, varying the thickness of the InP film and the maximum annealing temperature to optimize the bonding process and minimize void formation. The results show that controlling the annealing temperature and InP film thickness strongly affects the void characteristics, including the void area occupancy, void density, and void angle; it is also found that a lower void area occupancy and a lower void density correlate with reduced threshold current densities in the laser diodes. The laser diodes grown on InP/Si substrates demonstrate threshold current densities that are comparable to or even lower than those grown on InP substrates, provided that the void characteristics are sufficiently controlled. These findings underscore the importance of optimizing substrate fabrication processes to enhance the performance of laser diodes on InP/Si substrates. To improve the efficiency and performance of laser diodes for various applications, future work should focus on further refining these methods and exploring additional factors that influence void formation and laser properties.
  • Liang Zhao, Motonari Sato, Ryosuke Yada, Mizuki Kuroi, Kazuhiko Shimomura
    Physica Status Solidi A, 2400865-1-2400865-6, Mar 26, 2025  Peer-reviewedLast author
    This study investigates the effects of different annealing sequences on the hydrophilic bonding of InP/Si substrates for GaInAsP laser diodes (LDs). Several annealing profiles are explored, including a process with slow temperature ramping over a specific range to minimize void formation, and compared to the traditional 8‐hour annealing process, which uses a constant annealing rate. The slow ramping approach within a targeted temperature range is found to be more effective in reducing void formation and improving bonding quality. GaInAsP lasers grown on substrates annealed using this method demonstrate improved performance, showing the potential for optimized annealing processes to enhance the quality and efficiency of bonded LDs.
  • L. Zhao, G.K.Periyanayagam, R. Yada, J. Zhang, M. Kuroi, K. Shimomura
    Physica Status Solidi A, 2400652-1-2400652-6, Nov, 2024  Peer-reviewedLast author
  • Liang Zhao, Koji Agata, Ryosuke Yada, Kazuhiko Shimomura
    Journal of Electronic Materials, Jul 16, 2024  Peer-reviewedLast author
  • G.K. Periyanayagam, K. Shimomura
    Physica Status Solidi A, 2300677-1-2300677-6, Feb, 2024  Peer-reviewedLast author
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Misc.

 14
  • 116(103) 15-20, Jun 17, 2016  
  • Shimamoto Issei, Tada Tomofumi, Ogino Takehiro, Asakura Keita, Shimomura Kazuhiko, Waho Takao
    Proceedings of the IEICE General Conference, 2016(2) 70-70, Mar 1, 2016  
  • 下村和彦
    O plus E, 38(2) 139-147, Jan 25, 2016  Invited
  • SHIMOMURA Kazuhiko
    ITE Technical Report, 39(12) 15-20, Mar, 2015  
    Emission wavelength control of InAs QDs using MOVPE have been studied. Emission wavelength in each arrayed waveguides was controlled by selective area growth of MOVPE using SiO2 mask. Heights of QDs were controlled by using double-capping method, and emission wavelength was controlled by changing the composition of GaInAs buffer layer beneath the QDs. By using these methods, broadband InAs QDs LED, more than 600nm bandwidth, and flat-top spectrum have been obtained.
  • Shimamoto Issei, Hosono Suguru, Ohara Kazuma, Waho Takao, Ogino Takehiro, Shimomura Kazuhiko
    Proceedings of the IEICE General Conference, 2015(2) 61-61, Feb 24, 2015  
  • MATSUMOTO Keiichi, KANAYA Yoshinori, KISHIKAWA Junya, SHIMOMURA Kazuhiko
    Technical report of IEICE. OPE, 114(97) 15-18, Jun 20, 2014  
    We have demonstrated (Ga)InAs/InP QD arrayed waveguide LED on directly bonded InP/Si substrate. Electroluminescence signal from the LED has been achieved and comparable peak wavelength was observed from both the sample and reference grown on InP substrate. These results are promising in terms of integration of communication wavelength light source on InP/Si substrate.
  • Michimata Kenji, Shimamoto Issei, Waho Takao, Ogino Yuta, Shimomura Kazuhiko
    IEICE technical report. Electron devices, 113(449) 51-54, Feb 27, 2014  
    A nanowire-CMOS heterogeneously integrated circuit is demonstrated. The circuit consists of a voltage divider and a delta-sigma modulator (DSM); InAs nanowires are used in the voltage divider. InAs nanowires are deposited on a CMOS substrate by using Field-Assisted Self-Assembly (FASA) process based on dielectrophoresis. The DSM successfully converts the voltage across the nanowire into density-modulated digital pulses. The present result suggests that variations in the nanowire resistance caused, for example, by chemical absorption on the nanowire surface can be sensed and converted into the digital output. Furthermore, nanowire deposition is electrically monitored by measuring time variation of the current during the FASA.
  • MATSUMOTO Keiichi, ZHANG Xinxin, KANAYA Yoshinori, SHIMOMURA Kazuhiko
    Technical report of IEICE. LQE, 113(100) 13-18, Jun 21, 2013  
    Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we have fabricated InP/Si substrate employing wafer direct bonding and wet-etching. Then growth of GaInAs/InP MQW structure has been realized on the substrate using MOVPE. The same work has also been demonstrated on SiO_2-Si and Glass substrate. Furthermore, selective MOVPE growth of GaInAs/InP MQW structure has been done on the InP/Si substrate. Our work is of importance in terms of integration of several functional optical devices on heterogeneous substrate.
  • Funayama Hiroaki, Watanabe Tatsuro, Mitimata Kenji, Waho Takao, Murakami Shin, Shimomura Kazuhiko
    IEICE technical report. Electron devices, 112(445) 43-46, Feb 27, 2013  
    Field-assisted self-assembly process (FASA) of InAs and InAs/InP core-shell nanowires onto a Si substrate has been investigated. The dependence of the FASA yield on the frequency of the AC voltage applied between the FASA electrodes is examined. Furthermore, nanowires are deposited onto a MOS substrate to obtain an nMOS inverter. It is confirmed that the inverter operates properly.
  • Michimata Kenji, Funayama Hiroaki, Watanabe Tatsuro, Murakami Shin, Shimomura Kazuhiko, Waho Takao
    Proceedings of the Society Conference of IEICE, 2012(2) 58-58, Aug 28, 2012  
  • Yoshikawa Shohei, Saegusa Tomomitsu, Iwane Yuto, Yamauchi Masayuki, Shimomura Kazuhiko
    Proceedings of the Society Conference of IEICE, 2012(1) 236-236, Aug 28, 2012  
  • Yanagi Satoshi, Yoshioka Masahiro, Shimomura Kazuhiko
    Proceedings of the Society Conference of IEICE, 2012(1) 122-122, Aug 28, 2012  
  • KAWAKITA Yasumasa, SHIMOTAYA Suguru, MACHIDA Daisuke, SHIMOMURA Kazuhiko
    Technical report of IEICE. OPE, 104(507) 1-5, Dec 14, 2004  
    A GaInAs/InP MQW-based wavelength demultiplexer composed of a waveguide array in which refractive index varies across the array yielded successful results. Since optical path length differences between waveguides in the array are achieved through refractive-index differences controlled by SiO2 mask design in selective metal-organic vapor phase epitaxy MOVPE, straight waveguide grating is possible with reducing optical propagation losses. A straight waveguide array device with a 1.4 % refractive-index difference was fabricated. The fabrication of a preliminary wavelength demultiplexer was also achieved, obtaining a wavelength separation with around 25-nm spacing and FSR of approximately 100 nm. Moreover, an optical deflector was investigated and achieved primitive deflection at 1460- and 1490-nm incident wavelengths.
  • YAMAGATA T., KINOSHITA K., SAKURAI M., NITTA Y., SHIMOMURA K.
    Technical report of IEICE. OPE, 98(43) 37-42, May 14, 1998  
    We have measured the gate length dependence of the optical response characteristics in optically controlled MOSFET. By changing the pattern of optical absorption region, the leakage current was reduced remarkably, and we obtained almost same current-voltage characteristics in metal gate MOSFET. We have measured the optical response characteristics, such as modulation current, on-off ratio and responsivity in optically controlled MOSFET, and we obtained the high current modulation and responsivity by reducing the gate length of MOSFET region.

Books and Other Publications

 4

Presentations

 321
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Professional Memberships

 3

Research Projects

 31
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Industrial Property Rights

 6
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Social Activities

 16

Other

 5
  • Apr, 1992
    電磁気学Ⅲ、光電磁波伝送工学の講義においては、講義内容に関連する小テストをほぼ毎回実施している。ノートの参照を許し、また答案を回収後すぐに解答を示している。これにより学生の講義に対する理解を補助していると考えている。
  • Apr, 1992
    研究室の輪講会において、学生たちにレポート・論文の書き方を指導することに力を入れている。レポートを書くための文献・資料をどうやって集めるか、集めた文献・資料をどのように読みこなしていくか、自分が書こうとするレポート・論文で展開する議論をどのような構成にしていくか、文献・資料をどのように利用するか、レポート・論文の書式はどのようでなければならないか、といった点を中心に指導している。
  • Apr, 1992
    毎週行われている研究室の研究発表会において、学生たちにプレゼンテーションの仕方を指導することに力を入れている。わかりやすいプレゼンテーションをするためのパワーポイントの作り方、よりわかりやすい発表の仕方等について指導を行っている。
  • Apr, 1992
    研究室の卒業研究生、および大学院生には、研究データ・資料のデジタル化を行うことを義務付けている。また過去の卒業論文、修士論文、博士論文、また投稿論文、国際会議、国内学会発表論文、資料等、すべていつでも参照できる環境を整えている。さらに研究に関連することは同報メールで随時情報を送っている。
  • Apr, 1992
    本学に赴任以来、Research Reviewを3号発行した。これは、研究室所属者の雑誌投稿論文、国際会議、研究会、国内学会等の予稿をまとめたものであり、卒研生、大学院生の知的向上と成果公表をめざしたものである。
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