内田 寛

Abstract To investigate the Ta<sup>5+</sup>-substitution effects on crystal structure and ferroelectric property in HfO<sub>2</sub>-based films, Ta _x Hf_1-x O_2+δ films with various film thicknesses and Ta content were prepared. The ferroelectric orthorhombic phase was formed in a wide film thickness range of 20-100 nm while in a narrow composition range of x = 0.10-0.14. These thickness-insensitive and composition-sensitive characteristics of Ta⁵⁺-substituted HfO₂ film are similar to Y³⁺ rather than Zr⁴⁺. The X-ray photoelectron spectroscopy measurement suggests that the ionic state of Ta is not reduced and Ta _x Hf_1-x O_2+δ film has an excess oxygen state. The excess oxygen may consist of a combination of oxygen vacancies and more interstitial oxygens. These defects facilitate the formation of the ferroelectric phase, while decreasing the breakdown voltage and increasing the leakage current in Ta⁵⁺-substituted HfO₂ films. On the other hand, the generation of excess oxygen indicates the possibility of controlling oxygen vacancies which deteriorate fatigue and retention properties.

Abstract Verbascoside (VB), a phenylpropanoid glycoside found in many medicinal plants, is attracting the attention of researchers due to its significant clinical value. This study, for the first time, attempted the green synthesis of silver nanoparticles (AgNPs) using VB as a reducing and capping agent. The synthesized VB–AgNPs were characterized using ultraviolet–visible, dynamic light-scattering, Fourier-transform infrared spectroscopy, scanning electron microscopy, and energy-dispersive X-ray analyses. The cytotoxic potency against LX-2 human hepatic stellate cells was also investigated.

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

Abstract Aiming at applications of ferroelectric and optical devices, we investigated the fabrication of one-axis-oriented lead zirconate titanate Pb(Zr,Ti)O₃ (PZT) thin films on glass substrates with a processing temperature below the glass-transition point of the substrate. Chemical solution deposition (CSD)-derived PZT thin films with a preferential crystal orientation of (00l)/(h00)PZT were grown on an ITO/glass substrate with a crystalline buffer layer of calcium niobate Ca₂Nb₃O₁₀ (ns-CN). This ns-CN buffer layer lowered the crystallization temperature of the CSD-derived thin films, resulting in crystalline PZT thin films with one-axis (00l) orientation and ferroelectricity of P_r = 4 μC cm⁻² deposited on transparent glass substrates at a crystallization temperature of 500 °C.