Curriculum Vitaes
Profile Information
- Affiliation
- Professor, Faculty of Science and Technology, Department of Engineering and Applied Sciences, Sophia University
- Degree
- 修士（理学）(大阪大学)博士（理学）(大阪大学)
- Researcher number
- 20345143
- J-GLOBAL ID
- 200901050577784235
- researchmap Member ID
- 1000367699
- External link
(Subject of research)
development of quantum entanglement LED
カルコゲナイドのナノ構造作成
無給電放射線センサーの開発
Research Interests
5Research History
11-
Apr, 2015 - Mar, 2017
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Apr, 2011 - Mar, 2015
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Jul, 2010 - Mar, 2013
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Oct, 2008 - Mar, 2012
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Nov, 2007 - Mar, 2010
Education
3-
Apr, 1999 - Mar, 2001
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Apr, 1997 - Mar, 1999
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Apr, 1993 - Mar, 1997
Committee Memberships
8-
Mar, 2017 - Present
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Jun, 2017
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Sep, 2015 - Sep, 2015
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Sep, 2014 - Sep, 2014
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Jan, 2013 - Dec, 2013
Awards
1-
Apr, 2012
Papers
96-
Journal of Computational Electronics, 23 1380-1390, Sep 10, 2024 Peer-reviewedLast authorCorresponding author
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Space Telescopes and Instrumentation 2024: Optical, Infrared, and Millimeter Wave, 231-231, Aug 23, 2024 Peer-reviewedLast author
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Space Telescopes and Instrumentation 2024: Optical, Infrared, and Millimeter Wave, 236-236, Aug 23, 2024 Peer-reviewed
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Applied Physics A, 130(5) 304, Apr 13, 2024 Peer-reviewedLast authorCorresponding author
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Materials Research Express, 10(11) 115201-115201, Nov 1, 2023 Peer-reviewedLast authorCorresponding authorAbstract The shape of conductive filaments in CBRAM is important for resistance switching and conductance modulation, especially in applications like neuromorphic and reservoir computing that use conductance as weight. We report on RF-induced modulation of CBRAM using Ge2Sb3.4Te6.2 with sheet-like filaments and compared it to those with dendritic filaments. RF input below 100 MHz reduced SET and RESET voltages, similar to CBRAM with dendritic filaments, but showed significantly different resistance changes. Repeated RF on/off input gradually increased the resistance of low-resistance state, unlike the dendritic filament CBRAM, where the resistance decreased. The increased resistance suggests RF-induced denser sheet-like filaments. Furthermore, the resistance of the high-resistance state showed a peculiar RF-induced resistance change not observed in dendritic filaments. The resistance decreased during RF input and increased to nine times the initial value when RF was switched off. The results show that the conductance modulation by RF input strongly depends on the filament type.
Misc.
12-
電子情報通信学会大会講演論文集(CD-ROM), 2020, 2020
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Technical report of IEICE. LQE, 112(62) 21-24, May 18, 2012We observed excitonic and biexcitonic Rabi oscillation by using single photoexcited telecommunication-band quantum dot via photocurrent measurements. The biexcitonic population oscillates sinusoidally with the square of the pulse area while the excitonic population oscillates with the pulse area. The pulse area dependence clearly shows that the biexcitonic Rabi oscillation is caused by two-photon absorption. These results demonstrate that the telecom-band excitonic and biexcitonic system is promising for exciton based-quantum information devices compatible with optical fiber networks.
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Meeting abstracts of the Physical Society of Japan, 64(2) 594-594, Aug 18, 2009
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Meeting abstracts of the Physical Society of Japan, 63(2) 588-588, Aug 25, 2008
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Meeting abstracts of the Physical Society of Japan, 63(1) 688-688, Feb 29, 2008
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Meeting abstracts of the Physical Society of Japan, 62(2) 712-712, Aug 21, 2007
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2005 404-405, Sep 13, 2005
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Technical report of IEICE. LQE, 104(484) 11-14, Dec 3, 2004We fabricated InAs quantum-dot (QD) microdisk lasers (MDLs) with air-claddings. The room temperature (RT) lasing by femtosecond pulsed photopumping was achieved due to the sufficient gain in QD layers. The temperature dependence from 3 K to RT showed the degradation of the lasing characteristics, which was caused by the nonradiative recombination and internal absorption. By making the disk sidewall to be vertical, the cavity Q factor was increased, and the RT cw lasing was first achieved in the QD MDL with air claddings. The lasing wavelength was 1.28 μm, the irradiated threshold pump power was 410 μW, and the effective threshold power considering the absorption efficiency was estimated to be 81μW.
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2004 918-919, Sep 15, 2004
Books and Other Publications
1-
Springer, Boston, MA, 2001 (ISBN: 9780306471131)
Presentations
176-
The 44th Electronic Materials Symposium (EMS-44) [We1-43 ], Oct 15, 2025
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The 15th International Conference on Flexible and Printed Electronics [S2-O1], Sep 17, 2025
Research Projects
23-
科学研究費助成事業, 日本学術振興会, Apr, 2023 - Mar, 2028
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科学研究費助成事業, 日本学術振興会, Apr, 2023 - Mar, 2028
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Grants-in-Aid for Scientific Research, Japan Society for the Promotion of Science, Apr, 2023 - Mar, 2028
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2022 - Mar, 2025
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017