IDE Toshihide, BABA Toshihiko, TATEBAYASHI Jun, IWAMOTO Satoshi, NAKAOKA Toshihiro, ARAKAWA Yasuhiko
Technical report of IEICE. LQE, 104(484) 11-14, Dec 3, 2004
We fabricated InAs quantum-dot (QD) microdisk lasers (MDLs) with air-claddings. The room temperature (RT) lasing by femtosecond pulsed photopumping was achieved due to the sufficient gain in QD layers. The temperature dependence from 3 K to RT showed the degradation of the lasing characteristics, which was caused by the nonradiative recombination and internal absorption. By making the disk sidewall to be vertical, the cavity Q factor was increased, and the RT cw lasing was first achieved in the QD MDL with air claddings. The lasing wavelength was 1.28 μm, the irradiated threshold pump power was 410 μW, and the effective threshold power considering the absorption efficiency was estimated to be 81μW.