Curriculum Vitaes
Profile Information
- Affiliation
- Professor, Faculty of Science and Technology, Department of Engineering and Applied Sciences, Sophia University
- Degree
- 工学士(上智大学)工学修士(上智大学)博士（工学）(上智大学)
- Other name(s) (e.g. nickname)
- NOMURA ICHIROU
- Researcher number
- 00266074
- J-GLOBAL ID
- 200901053354827454
- researchmap Member ID
- 5000041413
1988-1994 Study on AlGaInP red-jight semiconductor laser diodes.
1995-current Development and device application of II-VI compound semiconductors on InP substrates.
(Subject of research)
Development of novel functional optical devices using compound semiconductors
(Proposed theme of joint or funded research)
Development of full color emission devices
Research Interests
7Research Areas
3Awards
1Papers
62-
Nanotechnology, 34(43) 435201-435201, Aug 14, 2023 Peer-reviewedAbstract In this study, the growth behavior of Indium gallium nitride (InGaN)-based nanocolumn arrays was investigated, and red emission nanocolumn micro-light emitting diodes (μ-LEDs) were fabricated. The internal structure of the InGaN/GaN superlattice (SL) layer under the multiple-quantum-well (MQW) active layers was evaluated using scanning transmission electron microscopy (STEM) analysis. It was revealed that the InGaN crystal plane at the top of the nanocolumn changed from the c-plane, (1-102) plane, to the (10-11) plane as the number of SL pairs increased. A semipolar (10-11) plane was completely formed on top of the nanocolumn by growing InGaN/GaN SLs over 15–20 pairs, where the InGaN/GaN SL layers were uniformly piled up, maintaining the (10-11) plane. Therefore, when InGaN/AlGaN MQWs were grown on the (10-11) plane InGaN/GaN SL layer, the growth of the (10-11) plane semipolar InGaN active layers was observed in the high-angle annular dark field (HAADF)-STEM image. Moreover, the acute nanocolumn top of the (10-11) plane of the InGaN/GaN SL underlayer did not contribute to the formation of the c-plane InGaN core region. Red nanocolumn μ-LEDs with an φ12 μm emission window were fabricated using the (10-11) plane MQWs to obtain the external quantum efficiency of 1.01% at 51 A cm−2. The process of nanocolumn μ-LEDs suitable for the smaller emission windows was provided, where the flat p-GaN contact layer contributed to forming a fine emission window of φ5 μm.
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Journal of Crystal Growth, 512 96-99, Feb 6, 2019 Peer-reviewed
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Journal of Electronic Materials, 47(8) 1-4, May 24, 2018 Peer-reviewed
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PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 13(7-9) 665-668, 2016 Peer-reviewed
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PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 13(7-9) 669-672, 2016 Peer-reviewed
Misc.
13-
Technical report of IEICE. LQE, 114(338) 117-120, Nov 27, 2014Nitride has an attractive feature of bandgap engineering from ultraviolet to infrared. However, a lot of defects in nitride inhibit the feature. In this study, we demonstrated nitride nanocolumn on Si wafer that is expected realization of large-scale/low-cost devices. Furthermore, nanocolumn structure is expected to suppress propagation of dislocation. We employed a sputter-deposited AlN nucleation layer, because it is so difficult to grow nitride crystal on Si wafer. We successfully fabricated a single crystalline GaN nanocolumns array even on the sputter-deposited film containing high-density dislocations. Single-peak PL emission in wide visible range from integrated InGaN/GaN MQW, and control of PL peak wavelength by pre-patterning were also demonstrated.
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IEICE technical report, 108(351) 53-58, Dec 5, 2008MgZnCdSe, BeZnTe, and BeZnSeTe II-VI compound semiconductors grown on InP substrates are very attractive for middle visible range, especially green light emitting devices. We have developed these materials and emitting devices composed of BeZnSeTe active, MgSe/ZnCdSe superlattice (SL) n-cladding, and MgSeBeZnTe SL p-cladding layers. Long lifetime operations beyond 5000h were achieved for the devices, which shows a remarkable improvement of the aging characteristic of II-VI devices. We succeeded in photopumped green lasing at room temperature for the double heterostructures having a BeZnSeTe active layer to indicate a high potentiality of BeZnSeTe as an active layer of green laser diodes.
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Technical report of IEICE. LQE, 103(527) 45-48, Dec 12, 2003Novel II-VI compound materials such as MgZnCdSe, BeZnTe, and their related superlattices (SLs) grown on InP substrates were proposed for wide-range visible optical devices such as laser diodes (LDs) and light emitting diodes (LEDs).Visible LEDs consisting of ZnCdSe/BeZnTe SL active, MgSe/BeZnTe SL p-cladding, and MgSe/ZnCdSe SL n-cladding layers were fabricated to obtain wide-range visible electro luminescence (EL) emissions from 554 (yellow-green) to 644 nm (red). For yellow (575nm) LEDs, a long lifetime more than 3500 hours was demonstrated to show high reliability of the LEDs. LDs with ZnCdSe active layers were fabricated. Yellow-green lasing operations around 560 nm were successfully achieved under pulsed current injection at 77 K, for the first time.
Books and Other Publications
2-
Springer, 2007 (ISBN: 9783540472346)
Presentations
268-
The 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 16, 2023
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The 22th International Symposium on Advanced Technology (ISAT-22), Oct 20, 2923
Professional Memberships
1Research Projects
20-
Grants-in-Aid for Scientific Research, Japan Society for the Promotion of Science, Apr, 2023 - Mar, 2027
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A), Japan Society for the Promotion of Science, Apr, 2019 - Mar, 2022
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2018 - Mar, 2021
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017
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Grants-in-Aid for Scientific Research Grant-in-Aid for Specially Promoted Research, Japan Society for the Promotion of Science, 2012 - 2016
Industrial Property Rights
2Other
173-
Yellow-green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates 2005
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Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates 2005
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Green-to-blue emissions from MgSe/BeZnSeTe II-VI compound superlattices and quantum well structures grown on InP substrates 2006
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High p-doping of MgZnCdSe II-VI compounds on InP substrates and application for visible light emitting devices 2006
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Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II-VI compound superlattices on InP substrates 2006