Shimomura Kazuhiko

We investigate broadband luminescence LED using InAs quantum dots array waveguides structure. Quantum dots heights and composition of buffer layer be controled by selective MOVPE growth and double cap procedure. Change of energy level with each change in layer, we conduct broadband luminescence. This time, we analyzed 3 layer LED's spectrum.

A novel wavelength demutiplexer and wavelength switch using arrayed waveguide with linearly varying refractive index distribution by MOVPE selective area growth has been proposed. The thickness of the each waveguide in the array has changed gradually. We have already demonstrated the switching characteristics in GaInAs/InP MQW arrayed waveguides devices by thermo-optic effect. This time, we have designed a triangular heater newly, and achieved the reduction of the consumption power for four-port switching with demultiplexed 4 wavelengths light.

A novel wavelength demutiplexer and wavelength selective switch using arrayed waveguide with linearly varying refractive index distribution by MOVPE selective area growth has been proposed. By placing the asymmetric width of SiO_2 mask pattern on both sides of the arrayed waveguide, the thickness of the each waveguide in the array has changed gradually. A wavelength demultiplexer using arrayed waveguides in which refractive index varies linearly across the devices was investigated and successful fabrication of GalnAs/InP MQW arrayed waveguide devices was achieved. This time, we have obtained the structural dependence on the performance of wavelength demultiplexing and switching in the variable refractive index waveguide array which has Rowland circle structure slab waveguide using FORTRAN simulation.

Semiconductor self-assembled quantum dots (QDs) that have zero-dimensional carrier confinement structure are predicted to have unique physical properties. And these QDs are expected to increase the performance of various semiconductor optical devices such as laser or LED. By using the semiconductor quantum well structure, only one dimension of the height can be controlled the quantum energy level, on the other hand, in the QDs structure, the three-dimensional control of the energy level is possible, and we can obtain the more wide wavelength control. For this reason, The wide wavelength emission source can be applied, such as very wideband wavelength division multiplex (WDM) system, including the 1.55μm optical telecommunication wavelength, the environmental gas detecting in the longer wavelength near the 2.0μm,and the light source for optical coherence tomography. In this study, we show the wideband wavelength electro luminescence (EL) more than 400nm of quantum dot LED using selective MOVPE growth and double-cap procedure.

A novel wavelength demutiplexer and wavelength selective switch using arrayed waveguide with linearly varying refractive index distribution by MOVPE selective area growth has been proposed. By placing the asymmetric width of SiO_2 mask pattern on both sides of the arrayed waveguide, the thickness of the each waveguide in the array has changed gradually. A wavelength demultiplexer using arrayed waveguides in which refractive index varies linearly across the devices was investigated and successful fabrication of GaInAs/InP MQW arrayed waveguide devices was achieved. This time, we have obtained the structural dependence on the performance of wavelength demultiplexing in the variable refractive index waveguide array using BPM simulation, and we have experimentally examined the change of output port intensity by carrier injection in this device.

A novel wavelength demutiplexer and wavelength selective switch using arrayed waveguide with linearly varying refractive index distribution by MOVPE selective area growth has been proposed. By placing the asymmetric width of SiO_2 mask pattern on both sides of the arrayed waveguide, the thickness of the each waveguide in the array has changed gradually. A wavelength demultiplexer using arrayed waveguides in which refractive index varies linearly across the devices was investigated and successful fabrication of GaInAs/InP MQW arrayed waveguide devices was achieved. This time, we report that four wavelength lights were switched and demultiplexed between the four output ports in the wavelength selective switch using GaInAs/InP MQW variable index arrayed waveguide by thermo-optic (TO) effect.