Department of Engineering and Applied Sciences

Nakaoka Toshihiro

  (中岡 俊裕)

Profile Information

Affiliation
Professor, Faculty of Science and Technology, Department of Engineering and Applied Sciences, Sophia University
Degree
修士(理学)(大阪大学)
博士(理学)(大阪大学)

Researcher number
20345143
J-GLOBAL ID
200901050577784235
researchmap Member ID
1000367699

External link

(Subject of research)
development of quantum entanglement LED
カルコゲナイドのナノ構造作成
無給電放射線センサーの開発


Papers

 95
  • Yifei Yin, Toshihiro Nakaoka
    Journal of Computational Electronics, Sep 10, 2024  Peer-reviewedLast authorCorresponding author
  • Takehiko Wada, Kasumi Miyata, Lisa Toyoshima, Masahiro Ueda, Riki Chin, Yoshinori Shohmitsu, Toyoaki Suzuki, Toshihiro Nakaoka
    Space Telescopes and Instrumentation 2024: Optical, Infrared, and Millimeter Wave, 231-231, Aug 23, 2024  Peer-reviewedLast author
  • Takao Nakagawa, Hideo Matsuhara, Umi Enokidani, Toyoaki Suzuki, Shunsuke Baba, Yasuhiro Hirahara, Hidehiro Kaneda, Ryoichi Koga, Yuan Li, Biao Zhao, Daiki Takama, Hiroshi Sasago, Takehiko Wada, Toshihiro Nakaoka, Taiki Eda, Ryota Kakihara, Yoshinori Shohmitsu, Takuya Hosobata, Noboru Ebizuka, Yutaka Yamagata, Shota Notsu, Hideko Nomura
    Space Telescopes and Instrumentation 2024: Optical, Infrared, and Millimeter Wave, 236-236, Aug 23, 2024  Peer-reviewed
  • Hiroki Toyoda, Yifei Yin, Keito Tsukamoto, Toshihiro Nakaoka
    Applied Physics A, 130(5) 304, Apr 13, 2024  Peer-reviewedLast authorCorresponding author
  • Yifei Yin, Keito Tsukamoto, Hitoshi Hayashi, Toshihiro Nakaoka
    Materials Research Express, 10(11) 115201-115201, Nov 1, 2023  Peer-reviewedLast authorCorresponding author
    Abstract The shape of conductive filaments in CBRAM is important for resistance switching and conductance modulation, especially in applications like neuromorphic and reservoir computing that use conductance as weight. We report on RF-induced modulation of CBRAM using Ge2Sb3.4Te6.2 with sheet-like filaments and compared it to those with dendritic filaments. RF input below 100 MHz reduced SET and RESET voltages, similar to CBRAM with dendritic filaments, but showed significantly different resistance changes. Repeated RF on/off input gradually increased the resistance of low-resistance state, unlike the dendritic filament CBRAM, where the resistance decreased. The increased resistance suggests RF-induced denser sheet-like filaments. Furthermore, the resistance of the high-resistance state showed a peculiar RF-induced resistance change not observed in dendritic filaments. The resistance decreased during RF input and increased to nine times the initial value when RF was switched off. The results show that the conductance modulation by RF input strongly depends on the filament type.

Misc.

 11

Books and Other Publications

 1

Presentations

 167

Professional Memberships

 2

Research Projects

 22