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  2. Nomura Ichirou

Nomura Ichirou

  (野村 一郎)

Profile Information

Affiliation
Professor, Faculty of Science and Technology, Department of Engineering and Applied Sciences, Sophia University
Degree
工学士(上智大学)
工学修士(上智大学)
博士（工学）(上智大学)
Other name(s) (e.g. nickname)
NOMURA ICHIROU
Researcher number
00266074
J-GLOBAL ID
200901053354827454
researchmap Member ID
5000041413

1988-1994 Study on AlGaInP red-jight semiconductor laser diodes.
1995-current Development and device application of II-VI compound semiconductors on InP substrates.

(Subject of research)
Development of novel functional optical devices using compound semiconductors

(Proposed theme of joint or funded research)
Development of full color emission devices

Research Interests

 7

Research Areas

 3

Awards

 1

Papers

 62
  • Jumpei Yamada, Ai Mizuno, Tatsuya Honda, Keigo Yoshida, Rie Togashi, Ichirou Nomura, Tomohiro Yamaguchi, Tohru Honda, Katsumi Kishino
    Nanotechnology, 34(43) 435201-435201, Aug 14, 2023  Peer-reviewed
    Abstract In this study, the growth behavior of Indium gallium nitride (InGaN)-based nanocolumn arrays was investigated, and red emission nanocolumn micro-light emitting diodes (μ-LEDs) were fabricated. The internal structure of the InGaN/GaN superlattice (SL) layer under the multiple-quantum-well (MQW) active layers was evaluated using scanning transmission electron microscopy (STEM) analysis. It was revealed that the InGaN crystal plane at the top of the nanocolumn changed from the c-plane, (1-102) plane, to the (10-11) plane as the number of SL pairs increased. A semipolar (10-11) plane was completely formed on top of the nanocolumn by growing InGaN/GaN SLs over 15–20 pairs, where the InGaN/GaN SL layers were uniformly piled up, maintaining the (10-11) plane. Therefore, when InGaN/AlGaN MQWs were grown on the (10-11) plane InGaN/GaN SL layer, the growth of the (10-11) plane semipolar InGaN active layers was observed in the high-angle annular dark field (HAADF)-STEM image. Moreover, the acute nanocolumn top of the (10-11) plane of the InGaN/GaN SL underlayer did not contribute to the formation of the c-plane InGaN core region. Red nanocolumn μ-LEDs with an φ12 μm emission window were fabricated using the (10-11) plane MQWs to obtain the external quantum efficiency of 1.01% at 51 A cm−2. The process of nanocolumn μ-LEDs suitable for the smaller emission windows was provided, where the flat p-GaN contact layer contributed to forming a fine emission window of φ5 μm.
  • Kenta Ishii, Ryosuke Amagasu, Ichirou Nomura
    Journal of Crystal Growth, 512 96-99, Feb 6, 2019  Peer-reviewed
  • Yudai Momose, Ichirou Nomura
    Journal of Electronic Materials, 47(8) 1-4, May 24, 2018  Peer-reviewed
  • Koji Fukushima, Tomohiro Shiraishi, Ryohei Kobayashi, Katsumi Kishino, Ichirou Nomura
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 13(7-9) 665-668, 2016  Peer-reviewed
  • Ryohei Kobayashi, Shingo Takamatsu, Koji Fukushima, Katsumi Kishino, Ichirou Nomura
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 13(7-9) 669-672, 2016  Peer-reviewed
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Misc.

 13
  • NOMA Tomohiro, HAYASHI Hiroaki, FUKUSHIMA Daishi, KONNO Yuta, NOMURA Ichirou, KISHINO Katsumi
    Technical report of IEICE. LQE, 114(338) 117-120, Nov 27, 2014  
    Nitride has an attractive feature of bandgap engineering from ultraviolet to infrared. However, a lot of defects in nitride inhibit the feature. In this study, we demonstrated nitride nanocolumn on Si wafer that is expected realization of large-scale/low-cost devices. Furthermore, nanocolumn structure is expected to suppress propagation of dislocation. We employed a sputter-deposited AlN nucleation layer, because it is so difficult to grow nitride crystal on Si wafer. We successfully fabricated a single crystalline GaN nanocolumns array even on the sputter-deposited film containing high-density dislocations. Single-peak PL emission in wide visible range from integrated InGaN/GaN MQW, and control of PL peak wavelength by pre-patterning were also demonstrated.
  • NOMURA Ichirou, KISHINO Katsumi, EBISAWA Tomoya, KUSHIDA Shun, TASAI Kunihiko, NAKAMURA Hitoshi, ASATSUMA Tsunenori, NAKAJIMA Hiroshi
    IEICE technical report, 108(351) 53-58, Dec 5, 2008  
    MgZnCdSe, BeZnTe, and BeZnSeTe II-VI compound semiconductors grown on InP substrates are very attractive for middle visible range, especially green light emitting devices. We have developed these materials and emitting devices composed of BeZnSeTe active, MgSe/ZnCdSe superlattice (SL) n-cladding, and MgSeBeZnTe SL p-cladding layers. Long lifetime operations beyond 5000h were achieved for the devices, which shows a remarkable improvement of the aging characteristic of II-VI devices. We succeeded in photopumped green lasing at room temperature for the double heterostructures having a BeZnSeTe active layer to indicate a high potentiality of BeZnSeTe as an active layer of green laser diodes.
  • KISHINO Katsumi, NOMURA Ichirou
    Technical report of IEICE. LQE, 103(527) 45-48, Dec 12, 2003  
    Novel II-VI compound materials such as MgZnCdSe, BeZnTe, and their related superlattices (SLs) grown on InP substrates were proposed for wide-range visible optical devices such as laser diodes (LDs) and light emitting diodes (LEDs).Visible LEDs consisting of ZnCdSe/BeZnTe SL active, MgSe/BeZnTe SL p-cladding, and MgSe/ZnCdSe SL n-cladding layers were fabricated to obtain wide-range visible electro luminescence (EL) emissions from 554 (yellow-green) to 644 nm (red). For yellow (575nm) LEDs, a long lifetime more than 3500 hours was demonstrated to show high reliability of the LEDs. LDs with ZnCdSe active layers were fabricated. Yellow-green lasing operations around 560 nm were successfully achieved under pulsed current injection at 77 K, for the first time.
  • SHINOZAKI Wataru, NOMURA Ichirou, SHIMBO Hiroyuki, HATTORI Hiroshi, SANO Takashi, CHE Song-Bek, KIKUCHI Akihiko, SHIMOMURA Kazuhiko, KISHINO Katsumi
    1998 354-355, Sep 7, 1998  
  • HATTORI Hiroshi, NOMURA Ichirou, SHINBO Hiroyuki, NAGANO Takeshi, HARAGUCHI Masaru, MORITA Toshihiro, KIKUCHI Akihiko, KISHINO Katsumi
    1997 216-217, Sep 16, 1997  
  • HARAGUCHI Masaru, ARAI Masayuki, MORITA Toshihiro, HATTORI Hiroshi, NAGANO Takeshi, NOMURA Ichirou, KIKUCHI Akihiko, SHIMOMURA Kazuhiko, KISHINO Katsumi
    Technical report of IEICE. LQE, 96(399) 61-66, Dec 10, 1996  
    The purpose of this study is the realization of optical modulator of II-VI MgZnCdSe compounds lattice-matching to InP substrate. In this study, quantum confined stark effect of ZnCdSe/MgZnCdSe multiple quantum well(MQW) grown on InP substrate by molecular beam epitaxy(MBE) was investigated. The reflectance measurement for the MQW structure at room temperature showed the maximum variation of the reflectance at a wavelength near the lowest excitonic transition gap was -6.3% which corresponded to the refractive index venation of -3.4% under 1.87x10^5V/cm electric field apply. This value was larger than that of III-V materials. It is expected that the high performance optical modulator is realized due to the large excitonic effect on II-VI compounds. Fabry-Parot optical modulator which consisted of the spacer layer of the MQW between two multiple layer reflectors were also designed, and the extinction ratio and the insertion loss of the modulator were estimated. Furthermore MgZnCdSe multiple layer reflectors were grown an maximum reflectance of 98.0% was obtained at 596nm
  • MORITA Toshihiro, SHINBO Hiroyuki, NOMURA Ichirou, KIKUCHI Akihiko, KISHINO Katsumi
    Technical report of IEICE. OPE, 95(415) 49-54, Dec 14, 1995  
    Mg_x(Zn_yCd_<1-y>)Se(x=0〜0.63) compounds and ZnCdSe/MgZnCdSe doublehetero-structures lattice-matching to InP substrates were grown by molecular beam epitaxy (MBE). The bandgap energy of these layers from 2.17 to 3.12 eV at 15K were evaluated by photoluminescence (PL) measurement. Refractive indices of MgZnCdSe compounds were calculated from reflectance measurements. ZnCdSe/MgZnCdSe quantum-well structures were fabricated. Sharp PL spectrum without deep level emission at 15K and strong PL emission from ZnCdSe quantum-well layer at room temperature were observed. And then, ZnCdSe/MgZnCdSe multi-quantum-well structures were fabricated. Electro-luminescence emissions under pulsed operation at 77K were observed for the first time in MgZnCdSe systems.
  • 森田 敏弘, 菊池 昭彦, 野村 一郎, 岸野 克巳
    電気学会研究会資料. EFM, 電子材料研究会, 1995(21) 1-9, Dec 6, 1995  
  • YOSHIDA Junji, KIKUCHI Akihiko, NOMURA Ichirou, KISHINO Katsumi
    Technical report of IEICE. OPE, 95(377) 67-72, Nov 21, 1995  
    Self-organization of strained quantum-wires (QWRs) in (GaP)_m/(InP)_m short period binary superlattice (SPBS) was systematically investigated by changing monolayer number m and substrate misorientation. It was largely depended on substrate misorientation angle (SMA) toward [011] direction. Self-organization on QWRs occurred at m over 1.2 ML for SMA of 0° and even at 1ML for SMA of 5°. While for SMA of 15°, self-organization of QWRs was suppressed by small step width. GaInP/AlInP compressively strained multi-quantum-wire lasers with (GaP)_<1.5>/(InP)_<1.5> SPBS active region was fabricated and low threshold current density with 257 A/cm^2 was obtained under the room temperature pulsed condition.
  • 吉田 順自, 菊池 昭彦, 野村 一郎, 岸野 克巳
    電気学会研究会資料. EFM, 電子材料研究会, 1995(1) 29-36, Nov 13, 1995  
  • YOSHIDA Junji, NOMURA Ichirou, KIKUCHI Akihiko, KISHINO Katsumi
    1995 788-790, Aug 21, 1995  
  • YOSHIDA Junji, NOMURA Ichirou, KIKUCHI Akihiko, KISHINO Katsumi
    Technical report of IEICE. LQE, 95(80) 19-24, May 26, 1995  
    Self-organization of GaInP strained quantum-wires in the growth of (Gap)_2/(InP)_2 short period binary superlattice on (100)GaAs substrates is a very effective way to realize strained quantum-wire lasers. The conditions for self-organization of strained quantum-wires, however, were not studied sufficiently. Thus, the condition under which quantum-wires were self-organized in is period (GaP)_m/(InP)_m short period binary superlattices grown by gas source MBE was investigated with changing monolayer number systematically, occurring self-organization of quantum-wires for the monolayer number m over 1.2. Room temperature low threshold current densities (J_<th>) Operation of self-organized GaInP/AlInP strained quantum-wire lasers with J_<th> of 294A/cm^2 (under continuous wave operation) and 278A/cm^2 (under pulsed condition) were described.
  • Suzuki Y, Nomura I, Kishino K, Suzuki T
    1992(4) 63-63, Sep 14, 1992  

Books and Other Publications

 2

Presentations

 271
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Professional Memberships

 1

Research Projects

 20
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Industrial Property Rights

 2

Other

 173
  • Apr, 2006
    講義科目と演習科目をリンクさせ、講義で学習した内容についてなるべく速やかに演習を行い、理解を深められるようにしている。また、演習を持ち込み不可の試験形式で行うことで演習を受ける前の講義の復習を促し、習熟度が増すようにしている。一方、講義科目では演習に加え中間及び期末試験を実施し、これにより学習到達度を評価している。
  • Apr, 2006
    情報関連の講義では、資料の配布やレポート提出を学内のPCやネット上で行うなど情報機器を有効利用し、授業運営の効率化を図っている。
  • Apr, 2006
    講義中では、各項目毎に質問を受け付けたり、簡単な例題を解いて内容をより理解できるように努めている。
  • Apr, 2000
    研究によって得たれた結果や成果等は速やかにメールで関係者に配布し、またデータベースに保存することで情報の共有化を図るように指導している。
  • Apr, 1994
    毎年8月にグループ内の研究会を開催し、それまでの研究成果のまとめや今後の方針について議論する。これにより研究の進め方や成果の取り纏め、報告の仕方等の指導を行っている。
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