NOMURA Ichirou, KISHINO Katsumi, EBISAWA Tomoya, KUSHIDA Shun, TASAI Kunihiko, NAKAMURA Hitoshi, ASATSUMA Tsunenori, NAKAJIMA Hiroshi
IEICE technical report, 108(351) 53-58, Dec 5, 2008
MgZnCdSe, BeZnTe, and BeZnSeTe II-VI compound semiconductors grown on InP substrates are very attractive for middle visible range, especially green light emitting devices. We have developed these materials and emitting devices composed of BeZnSeTe active, MgSe/ZnCdSe superlattice (SL) n-cladding, and MgSeBeZnTe SL p-cladding layers. Long lifetime operations beyond 5000h were achieved for the devices, which shows a remarkable improvement of the aging characteristic of II-VI devices. We succeeded in photopumped green lasing at room temperature for the double heterostructures having a BeZnSeTe active layer to indicate a high potentiality of BeZnSeTe as an active layer of green laser diodes.