Uchida Hiroshi

Abstract This study examines the effect of tensile stress on the ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin film, with a focus on Barkhausen noise, observed for the first time under such conditions. Tensile stress significantly alters domain wall motions, affecting Barkhausen noise more than average polarization. Frequency analysis identifies grain boundaries as primary pinning sites, consistent across stress levels. A non-linear relationship between stress, domain wall mobility, and polarization is found, where increased stress initially enhances pinning and polarization changes, but this effect diminishes at higher stress levels, indicating a shift in behavior.

Abstract To investigate the Ta<sup>5+</sup>-substitution effects on crystal structure and ferroelectric property in HfO<sub>2</sub>-based films, Ta _x Hf_1-x O_2+δ films with various film thicknesses and Ta content were prepared. The ferroelectric orthorhombic phase was formed in a wide film thickness range of 20-100 nm while in a narrow composition range of x = 0.10-0.14. These thickness-insensitive and composition-sensitive characteristics of Ta⁵⁺-substituted HfO₂ film are similar to Y³⁺ rather than Zr⁴⁺. The X-ray photoelectron spectroscopy measurement suggests that the ionic state of Ta is not reduced and Ta _x Hf_1-x O_2+δ film has an excess oxygen state. The excess oxygen may consist of a combination of oxygen vacancies and more interstitial oxygens. These defects facilitate the formation of the ferroelectric phase, while decreasing the breakdown voltage and increasing the leakage current in Ta⁵⁺-substituted HfO₂ films. On the other hand, the generation of excess oxygen indicates the possibility of controlling oxygen vacancies which deteriorate fatigue and retention properties.

Abstract Verbascoside (VB), a phenylpropanoid glycoside found in many medicinal plants, is attracting the attention of researchers due to its significant clinical value. This study, for the first time, attempted the green synthesis of silver nanoparticles (AgNPs) using VB as a reducing and capping agent. The synthesized VB–AgNPs were characterized using ultraviolet–visible, dynamic light-scattering, Fourier-transform infrared spectroscopy, scanning electron microscopy, and energy-dispersive X-ray analyses. The cytotoxic potency against LX-2 human hepatic stellate cells was also investigated.

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.